G3R350MT12J GeneSiC Semiconductor
| Кількість | Ціна |
|---|---|
| 1+ | 421.02 грн |
| 10+ | 370.42 грн |
| 25+ | 307.30 грн |
| 100+ | 286.86 грн |
| 250+ | 274.18 грн |
| 500+ | 265.01 грн |
| 1000+ | 255.85 грн |
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Технічний опис G3R350MT12J GeneSiC Semiconductor
Description: SIC MOSFET N-CH 11A TO263-7, Vgs(th) (Max) @ Id: 2.69V @ 2mA, Power Dissipation (Max): 75W (Tc), Rds On (Max) @ Id, Vgs: 420mOhm @ 4A, 15V, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 334 pF @ 800 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 15 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): ±15V, Drive Voltage (Max Rds On, Min Rds On): 15V, Part Status: Active, Supplier Device Package: TO-263-7.
Інші пропозиції G3R350MT12J
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
G3R350MT12J | GeneSiC Semiconductor |
 Description: SIC MOSFET N-CH 11A TO263-7Vgs(th) (Max) @ Id: 2.69V @ 2mA Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 420mOhm @ 4A, 15V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 334 pF @ 800 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 15 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): ±15V Drive Voltage (Max Rds On, Min Rds On): 15V Part Status: Active Supplier Device Package: TO-263-7 |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. |
| G3R350MT12J |
|
Виробник: GeneSiC Semiconductor
Description: SIC MOSFET N-CH 11A TO263-7
Vgs(th) (Max) @ Id: 2.69V @ 2mA
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 4A, 15V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 334 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 15 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 15V
Part Status: Active
Supplier Device Package: TO-263-7
Description: SIC MOSFET N-CH 11A TO263-7
Vgs(th) (Max) @ Id: 2.69V @ 2mA
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 4A, 15V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 334 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 15 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 15V
Part Status: Active
Supplier Device Package: TO-263-7
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.