G3R350MT12J GeneSiC Semiconductor

Description: SIC MOSFET N-CH 11A TO263-7, Vgs(th) (Max) @ Id: 2.69V @ 2mA, Power Dissipation (Max): 75W (Tc), Rds On (Max) @ Id, Vgs: 420mOhm @ 4A, 15V, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 334 pF @ 800 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 15 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): ±15V, Drive Voltage (Max Rds On, Min Rds On): 15V, Part Status: Active, Supplier Device Package: TO-263-7.