G3R40MT12J GeneSiC Semiconductor
Виробник: GeneSiC Semiconductor
Description: SIC MOSFET N-CH 75A TO263-7
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 35A, 15V
Power Dissipation (Max): 374W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 18mA (Typ)
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2929 pF @ 800 V
Description: SIC MOSFET N-CH 75A TO263-7
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 35A, 15V
Power Dissipation (Max): 374W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 18mA (Typ)
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2929 pF @ 800 V
на замовлення 1467 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 1180.58 грн |
Відгуки про товар
Написати відгук
Технічний опис G3R40MT12J GeneSiC Semiconductor
Description: SIC MOSFET N-CH 75A TO263-7, Packaging: Tube, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), Rds On (Max) @ Id, Vgs: 48mOhm @ 35A, 15V, Power Dissipation (Max): 374W (Tc), Vgs(th) (Max) @ Id: 2.7V @ 18mA (Typ), Supplier Device Package: TO-263-7, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 2929 pF @ 800 V.
Інші пропозиції G3R40MT12J за ціною від 999.04 грн до 1425.17 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
G3R40MT12J | Виробник : GeneSiC Semiconductor | MOSFET 1200V 40mohm TO-263-7 G3R SiC MOSFET |
на замовлення 571 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||
G3R40MT12J | Виробник : GeneSiC Semiconductor | Silicon Carbide MOSFET N Channel Enhancement Mode |
товар відсутній |
||||||||||||
G3R40MT12J | Виробник : GeneSiC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 53A; Idm: 140A; 374W Type of transistor: N-MOSFET Technology: G3R™; SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 53A Pulsed drain current: 140A Power dissipation: 374W Case: TO263-7 Gate-source voltage: -5...15V On-state resistance: 40mΩ Mounting: SMD Gate charge: 106nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal кількість в упаковці: 1 шт |
товар відсутній |
||||||||||||
G3R40MT12J | Виробник : GeneSiC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 53A; Idm: 140A; 374W Type of transistor: N-MOSFET Technology: G3R™; SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 53A Pulsed drain current: 140A Power dissipation: 374W Case: TO263-7 Gate-source voltage: -5...15V On-state resistance: 40mΩ Mounting: SMD Gate charge: 106nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal |
товар відсутній |