G3R60MT07J-TR GeneSiC Semiconductor
Виробник: GeneSiC Semiconductor
Description: 650V 60M TO-263-7 G3R SIC MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Power Dissipation (Max): 182W (Tc)
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Drain to Source Voltage (Vdss): 750 V
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Технічний опис G3R60MT07J-TR GeneSiC Semiconductor
Description: 650V 60M TO-263-7 G3R SIC MOSFET, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiC (Silicon Carbide Junction Transistor), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 44A (Tc), Power Dissipation (Max): 182W (Tc), Supplier Device Package: TO-263-7, Drive Voltage (Max Rds On, Min Rds On): 15V, Drain to Source Voltage (Vdss): 750 V.
Інші пропозиції G3R60MT07J-TR
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
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G3R60MT07J-TR | GeneSiC Semiconductor |
Description: 650V 60M TO-263-7 G3R SIC MOSFET Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Power Dissipation (Max): 182W (Tc) Supplier Device Package: TO-263-7 Drive Voltage (Max Rds On, Min Rds On): 15V Drain to Source Voltage (Vdss): 750 V |
товару немає в наявності |
В кошику од. на суму грн. |
 |
G3R60MT07J-TR | GeneSiC Semiconductor |
MOSFET 650V 60mohm TO-263-7 G3R SiC MOSFET |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. |
| G3R60MT07J-TR |
|
Виробник: GeneSiC Semiconductor
Description: 650V 60M TO-263-7 G3R SIC MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Power Dissipation (Max): 182W (Tc)
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Drain to Source Voltage (Vdss): 750 V
Description: 650V 60M TO-263-7 G3R SIC MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Power Dissipation (Max): 182W (Tc)
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V
Drain to Source Voltage (Vdss): 750 V
товару немає в наявності
В кошику
од. на суму грн.
| G3R60MT07J-TR |
|
Виробник: GeneSiC Semiconductor
MOSFET 650V 60mohm TO-263-7 G3R SiC MOSFET
MOSFET 650V 60mohm TO-263-7 G3R SiC MOSFET
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.