G3S06503A Global Power Technology-GPT
Виробник: Global Power Technology-GPT
Description: DIODE SIC 650V 11.5A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 181pF @ 0V, 1MHz
Current - Average Rectified (Io): 11.5A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 212.02 грн |
| 10+ | 183.75 грн |
| 100+ | 147.67 грн |
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Технічний опис G3S06503A Global Power Technology-GPT
Description: DIODE SIC 650V 11.5A TO220AC, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 181pF @ 0V, 1MHz, Current - Average Rectified (Io): 11.5A, Supplier Device Package: TO-220AC, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A, Current - Reverse Leakage @ Vr: 50 µA @ 650 V.
Інші пропозиції G3S06503A
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
G3S06503A | Global Power Technology Co. Ltd |
Description: DIODE SIC 650V 11.5A TO220AC Current - Reverse Leakage @ Vr: 50 µA @ 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A Voltage - DC Reverse (Vr) (Max): 650 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-220AC Current - Average Rectified (Io): 11.5A Capacitance @ Vr, F: 181pF @ 0V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. |
| G3S06503A |
|
Виробник: Global Power Technology Co. Ltd
Description: DIODE SIC 650V 11.5A TO220AC
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 11.5A
Capacitance @ Vr, F: 181pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Bulk
Description: DIODE SIC 650V 11.5A TO220AC
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 11.5A
Capacitance @ Vr, F: 181pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.