G3S06512B Global Power Technology
на замовлення 990 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 60+ | 246.68 грн |
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Технічний опис G3S06512B Global Power Technology
Description: DIODE ARR SIC 650V 27A TO247AB, Packaging: Tape & Box (TB), Package / Case: TO-247-3, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 27A (DC), Supplier Device Package: TO-247AB, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A, Current - Reverse Leakage @ Vr: 50 µA @ 650 V.
Інші пропозиції G3S06512B
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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G3S06512B | Виробник : Global Power Technology-GPT |
 Description: DIODE ARR SIC 650V 27A TO247ABPackaging: Cut Tape (CT) Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 27A (DC) Supplier Device Package: TO-247AB Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A Current - Reverse Leakage @ Vr: 50 µA @ 650 V |
товару немає в наявності |
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G3S06512B | Виробник : Global Power Technology-GPT |
Description: DIODE ARR SIC 650V 27A TO247AB Packaging: Tape & Box (TB) Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 27A (DC) Supplier Device Package: TO-247AB Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A Current - Reverse Leakage @ Vr: 50 µA @ 650 V |
товару немає в наявності |