G3S17020B Global Power Technology-GPT
Виробник: Global Power Technology-GPT
Description: SIC SCHOTTKY DIODE 1700V 20A 3-P
Current - Reverse Leakage @ Vr: 100 µA @ 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1700 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247AB
Current - Average Rectified (Io) (per Diode): 24A (DC)
Diode Configuration: 1 Pair Common Cathode
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Cut Tape (CT)
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Технічний опис G3S17020B Global Power Technology-GPT
Description: SIC SCHOTTKY DIODE 1700V 20A 3-P, Current - Reverse Leakage @ Vr: 100 µA @ 1700 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A, Voltage - DC Reverse (Vr) (Max): 1700 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: TO-247AB, Current - Average Rectified (Io) (per Diode): 24A (DC), Diode Configuration: 1 Pair Common Cathode, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tape & Box (TB).
Інші пропозиції G3S17020B
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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G3S17020B | Global Power Technology-GPT |
Description: SIC SCHOTTKY DIODE 1700V 20A 3-P Current - Reverse Leakage @ Vr: 100 µA @ 1700 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Voltage - DC Reverse (Vr) (Max): 1700 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-247AB Current - Average Rectified (Io) (per Diode): 24A (DC) Diode Configuration: 1 Pair Common Cathode Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tape & Box (TB) |
товару немає в наявності |
Мінімальне замовлення: 30 шт В кошику од. на суму грн. |
| G3S17020B |
|
Виробник: Global Power Technology-GPT
Description: SIC SCHOTTKY DIODE 1700V 20A 3-P
Current - Reverse Leakage @ Vr: 100 µA @ 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1700 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247AB
Current - Average Rectified (Io) (per Diode): 24A (DC)
Diode Configuration: 1 Pair Common Cathode
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tape & Box (TB)
Description: SIC SCHOTTKY DIODE 1700V 20A 3-P
Current - Reverse Leakage @ Vr: 100 µA @ 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1700 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247AB
Current - Average Rectified (Io) (per Diode): 24A (DC)
Diode Configuration: 1 Pair Common Cathode
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tape & Box (TB)
товару немає в наявності
Мінімальне замовлення: 30 шт
В кошику
од. на суму грн.