G40P03K Goford Semiconductor
Виробник: Goford Semiconductor
Description: MOSFET P-CH 30V 40A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 15A, 10V
Power Dissipation (Max): 138W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
| Кількість | Ціна |
|---|---|
| 2500+ | 13.61 грн |
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Технічний опис G40P03K Goford Semiconductor
Description: MOSFET P-CH 30V 40A TO-252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 9.5mOhm @ 15A, 10V, Power Dissipation (Max): 138W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V.
Інші пропозиції G40P03K за ціною від 12.32 грн до 71.35 грн
| Фото | Назва | Виробник | Інформація |
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G40P03K | Виробник : Goford Semiconductor |
Description: P-30V,RD(MAX)<9.5M@-10V,RD(MAX)< Input Capacitance (Ciss) (Max) @ Vds: 2622 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: TO-252 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 78W (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
на замовлення 1018 шт: термін постачання 21-31 дні (днів) |
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| G40P03K | Виробник : GOFORD Semiconductor |
P-30V,-40A,RD(max) Less Than 9.5mOhm at -10V,RD(max) Less Than 12.5mOhm at -4.5V,VTH -1.0V to -2.5V ,TO-252 |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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G40P03K | Виробник : Goford Semiconductor |
Description: P-30V,RD(MAX)<9.5M@-10V,RD(MAX)< Power Dissipation (Max): 78W (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 2622 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: TO-252 Vgs(th) (Max) @ Id: 2.5V @ 250µA |
товару немає в наявності |
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| G40P03K | Виробник : GOFORD SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -40A; 78W; TO252 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -40A Power dissipation: 78W Case: TO252 Gate-source voltage: ±20V Mounting: SMD Gate charge: 50nC Kind of channel: enhancement Technology: Trench |
товару немає в наявності |