G4953S Goford Semiconductor
Виробник: Goford Semiconductor
Description: MOSFET 2P-CH 30V 5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
Відгуки про товар
Написати відгук
Технічний опис G4953S Goford Semiconductor
Description: MOSFET 2P-CH 30V 5A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.6W (Tc), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 5A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V, Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOP.
Інші пропозиції G4953S за ціною від 11.94 грн до 61.99 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
G4953S | Goford Semiconductor |
Description: MOSFET 2P-CH 30V 5A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.6W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOP |
на замовлення 1661 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
 |
G4953S | GOFORD SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; Trench; unipolar; -30V; -5A; 1.6W; SOP8 Type of transistor: P-MOSFET x2 Technology: Trench Polarisation: unipolar Drain-source voltage: -30V Drain current: -5A Power dissipation: 1.6W Case: SOP8 Gate-source voltage: ±20V Mounting: SMD Gate charge: 11nC Kind of channel: enhancement |
на замовлення 3998 шт: термін постачання 14-30 дні (днів) |
|
| G4953S |
|
Виробник: Goford Semiconductor
Description: MOSFET 2P-CH 30V 5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
Description: MOSFET 2P-CH 30V 5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
Rds On (Max) @ Id, Vgs: 45mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
на замовлення 1661 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 50.63 грн |
| 11+ | 30.09 грн |
| 50+ | 21.96 грн |
| 100+ | 18.12 грн |
| 500+ | 13.76 грн |
| G4953S |
|
Виробник: GOFORD SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; Trench; unipolar; -30V; -5A; 1.6W; SOP8
Type of transistor: P-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5A
Power dissipation: 1.6W
Case: SOP8
Gate-source voltage: ±20V
Mounting: SMD
Gate charge: 11nC
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; Trench; unipolar; -30V; -5A; 1.6W; SOP8
Type of transistor: P-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5A
Power dissipation: 1.6W
Case: SOP8
Gate-source voltage: ±20V
Mounting: SMD
Gate charge: 11nC
Kind of channel: enhancement
на замовлення 3998 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 61.99 грн |
| 15+ | 29.20 грн |
| 25+ | 22.18 грн |
| 100+ | 14.98 грн |
| 500+ | 13.21 грн |
| 1000+ | 11.94 грн |