G4S06508JT Global Power Technology-GPT
Виробник: Global Power Technology-GPT
Description: DIODE SIC 650V 23.5A TO220ISO
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220ISO
Current - Average Rectified (Io): 23.5A
Capacitance @ Vr, F: 395pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Isolated Tab
Packaging: Cut Tape (CT)
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Технічний опис G4S06508JT Global Power Technology-GPT
Description: DIODE SIC 650V 23.5A TO220ISO, Current - Reverse Leakage @ Vr: 50 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A, Voltage - DC Reverse (Vr) (Max): 650 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: TO-220ISO, Current - Average Rectified (Io): 23.5A, Capacitance @ Vr, F: 395pF @ 0V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-2 Isolated Tab, Packaging: Tape & Box (TB).
Інші пропозиції G4S06508JT
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
|
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G4S06508JT | Global Power Technology-GPT |
Description: DIODE SIC 650V 23.5A TO220ISO Current - Reverse Leakage @ Vr: 50 µA @ 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Voltage - DC Reverse (Vr) (Max): 650 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-220ISO Current - Average Rectified (Io): 23.5A Capacitance @ Vr, F: 395pF @ 0V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Isolated Tab Packaging: Tape & Box (TB) |
товару немає в наявності |
Мінімальне замовлення: 30 шт В кошику од. на суму грн. |
 |
G4S06508JT | Global Power Technology Co. Ltd |
Description: DIODE SIC 650V 23.5A TO220ISO Current - Reverse Leakage @ Vr: 50 µA @ 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Voltage - DC Reverse (Vr) (Max): 650 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-220ISO Current - Average Rectified (Io): 23.5A Capacitance @ Vr, F: 395pF @ 0V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Isolated Tab Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. |
| G4S06508JT |
|
Виробник: Global Power Technology-GPT
Description: DIODE SIC 650V 23.5A TO220ISO
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220ISO
Current - Average Rectified (Io): 23.5A
Capacitance @ Vr, F: 395pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Isolated Tab
Packaging: Tape & Box (TB)
Description: DIODE SIC 650V 23.5A TO220ISO
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220ISO
Current - Average Rectified (Io): 23.5A
Capacitance @ Vr, F: 395pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Isolated Tab
Packaging: Tape & Box (TB)
товару немає в наявності
Мінімальне замовлення: 30 шт
В кошику
од. на суму грн.
| G4S06508JT |
|
Виробник: Global Power Technology Co. Ltd
Description: DIODE SIC 650V 23.5A TO220ISO
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220ISO
Current - Average Rectified (Io): 23.5A
Capacitance @ Vr, F: 395pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Isolated Tab
Packaging: Bulk
Description: DIODE SIC 650V 23.5A TO220ISO
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220ISO
Current - Average Rectified (Io): 23.5A
Capacitance @ Vr, F: 395pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Isolated Tab
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.