G50N03D5 Goford Semiconductor
Виробник: Goford Semiconductor
Description: N30V,RD(MAX)<4.5M@10V,RD(MAX)<8M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Power Dissipation (Max): 25.5W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1661 pF @ 15 V
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 68.19 грн |
| 10+ | 41.06 грн |
| 50+ | 30.24 грн |
| 100+ | 25.10 грн |
| 500+ | 19.30 грн |
Товар під замовлення
Немає на нашому складі — привозимо зі складу постачальника після оформлення замовлення.
термін постачання:
21-31 дні (днів)
Мінімальна партія:
5 шт
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Технічний опис G50N03D5 Goford Semiconductor
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 50A; 25.5W; DFN5x6-8, Type of transistor: N-MOSFET, Technology: Trench, Polarisation: unipolar, Drain-source voltage: 30V, Drain current: 50A, Power dissipation: 25.5W, Case: DFN5x6-8, Gate-source voltage: ±20V, Mounting: SMD, Kind of channel: enhancement, Gate charge: 38.4nC.
Інші пропозиції G50N03D5
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
|
|
G50N03D5 | Goford Semiconductor |
Description: N30V,RD(MAX)<4.5M@10V,RD(MAX)<8M Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V Power Dissipation (Max): 25.5W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-DFN (4.9x5.75) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 38.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1661 pF @ 15 V |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. |
| G50N03D5 | GOFORD SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 50A; 25.5W; DFN5x6-8 Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 30V Drain current: 50A Power dissipation: 25.5W Case: DFN5x6-8 Gate-source voltage: ±20V Mounting: SMD Kind of channel: enhancement Gate charge: 38.4nC |
товару немає в наявності |
В кошику од. на суму грн. |
| G50N03D5 |
|
Виробник: Goford Semiconductor
Description: N30V,RD(MAX)<4.5M@10V,RD(MAX)<8M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Power Dissipation (Max): 25.5W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1661 pF @ 15 V
Description: N30V,RD(MAX)<4.5M@10V,RD(MAX)<8M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Power Dissipation (Max): 25.5W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1661 pF @ 15 V
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| G50N03D5 |
|
Виробник: GOFORD SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 50A; 25.5W; DFN5x6-8
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Power dissipation: 25.5W
Case: DFN5x6-8
Gate-source voltage: ±20V
Mounting: SMD
Kind of channel: enhancement
Gate charge: 38.4nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 50A; 25.5W; DFN5x6-8
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Power dissipation: 25.5W
Case: DFN5x6-8
Gate-source voltage: ±20V
Mounting: SMD
Kind of channel: enhancement
Gate charge: 38.4nC
товару немає в наявності
В кошику
од. на суму грн.