G51XT Global Power Technology-GPT
Виробник: Global Power Technology-GPTDescription: DIODE SIC 650V 1.84A SOD123FL
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 57.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 1.84A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
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Технічний опис G51XT Global Power Technology-GPT
Description: DIODE SIC 650V 1.84A SOD123FL, Packaging: Tape & Box (TB), Package / Case: SOD-123F, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 57.5pF @ 0V, 1MHz, Current - Average Rectified (Io): 1.84A, Supplier Device Package: SOD-123FL, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1 A, Current - Reverse Leakage @ Vr: 50 µA @ 650 V.
Інші пропозиції G51XT
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G51XT | Виробник : Global Power Technology-GPT |
Description: DIODE SIC 650V 1.84A SOD123FL Packaging: Tape & Box (TB) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 57.5pF @ 0V, 1MHz Current - Average Rectified (Io): 1.84A Supplier Device Package: SOD-123FL Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1 A Current - Reverse Leakage @ Vr: 50 µA @ 650 V |
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