G60N04D52 Goford Semiconductor
Виробник: Goford Semiconductor
Description: MOSFET 40V 35A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 20W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1998pF @ 20V
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Part Status: Active
| Кількість | Ціна |
|---|---|
| 5000+ | 19.57 грн |
| 15000+ | 17.41 грн |
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Технічний опис G60N04D52 Goford Semiconductor
Description: MOSFET 40V 35A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 20W (Tc), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1998pF @ 20V, Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V, Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-DFN (4.9x5.75), Part Status: Active.
Інші пропозиції G60N04D52 за ціною від 24.35 грн до 95.66 грн
| Фото | Назва | Виробник | Інформація |
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G60N04D52 | Виробник : Goford Semiconductor |
Description: MOSFET 40V 35A 8DFN Part Status: Active Supplier Device Package: 8-DFN (4.9x5.75) Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1998pF @ 20V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drain to Source Voltage (Vdss): 40V Power - Max: 20W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Technology: MOSFET (Metal Oxide) |
на замовлення 4999 шт: термін постачання 21-31 дні (днів) |
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| G60N04D52 | Виробник : GOFORD Semiconductor |
Dual N-CH,40V,35A,RD(max) Less Than 9mOhm at 10V,RD(max) Less Than 12mOhm at 4.5V,VTH 1.0V to 2.5V,DFN5X6-8L |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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G60N04D52 | Виробник : Goford Semiconductor |
Description: MOSFET 40V 35A 8DFN Input Capacitance (Ciss) (Max) @ Vds: 1998pF @ 20V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drain to Source Voltage (Vdss): 40V Power - Max: 20W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) Part Status: Active Supplier Device Package: 8-DFN (4.9x5.75) Vgs(th) (Max) @ Id: 2.5V @ 250µA Technology: MOSFET (Metal Oxide) Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V |
товару немає в наявності |
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| G60N04D52 | Виробник : GOFORD SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; Trench; unipolar; 40V; 60A; 65W; DFN5x6-8 Type of transistor: N-MOSFET x2 Technology: Trench Polarisation: unipolar Drain-source voltage: 40V Drain current: 60A Power dissipation: 65W Case: DFN5x6-8 Gate-source voltage: ±20V Mounting: SMD Gate charge: 42nC Kind of channel: enhancement |
товару немає в наявності |