G60N04D52 Goford Semiconductor
Виробник: Goford Semiconductor
Description: MOSFET 40V 35A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 20W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1998pF @ 20V
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Part Status: Active
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 19.56 грн |
| 15000+ | 17.41 грн |
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Технічний опис G60N04D52 Goford Semiconductor
Description: MOSFET 40V 35A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 20W (Tc), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1998pF @ 20V, Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V, Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-DFN (4.9x5.75), Part Status: Active.
Інші пропозиції G60N04D52 за ціною від 24.34 грн до 95.63 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
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G60N04D52 | Goford Semiconductor |
Description: MOSFET 40V 35A 8DFN Part Status: Active Supplier Device Package: 8-DFN (4.9x5.75) Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1998pF @ 20V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drain to Source Voltage (Vdss): 40V Power - Max: 20W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Technology: MOSFET (Metal Oxide) |
на замовлення 4999 шт: термін постачання 21-31 дні (днів) |
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| G60N04D52 | GOFORD Semiconductor |
Dual N-CH,40V,35A,RD(max) Less Than 9mOhm at 10V,RD(max) Less Than 12mOhm at 4.5V,VTH 1.0V to 2.5V,DFN5X6-8L |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
|
| G60N04D52 |
|
Виробник: Goford Semiconductor
Description: MOSFET 40V 35A 8DFN
Part Status: Active
Supplier Device Package: 8-DFN (4.9x5.75)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1998pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 20W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Technology: MOSFET (Metal Oxide)
Description: MOSFET 40V 35A 8DFN
Part Status: Active
Supplier Device Package: 8-DFN (4.9x5.75)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1998pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 20W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Technology: MOSFET (Metal Oxide)
на замовлення 4999 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 95.63 грн |
| 10+ | 58.12 грн |
| 100+ | 38.56 грн |
| 500+ | 28.30 грн |
| 1000+ | 25.76 грн |
| 2000+ | 24.34 грн |
| G60N04D52 |
|
Виробник: GOFORD Semiconductor
Dual N-CH,40V,35A,RD(max) Less Than 9mOhm at 10V,RD(max) Less Than 12mOhm at 4.5V,VTH 1.0V to 2.5V,DFN5X6-8L
Dual N-CH,40V,35A,RD(max) Less Than 9mOhm at 10V,RD(max) Less Than 12mOhm at 4.5V,VTH 1.0V to 2.5V,DFN5X6-8L
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 28.66 грн |