G60N04K Goford Semiconductor
Виробник: Goford SemiconductorDescription: MOSFET N-CH 40V 60A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 30A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 20 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
на замовлення 90000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2500+ | 13.76 грн |
| 15000+ | 12.47 грн |
| 30000+ | 11.74 грн |
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Технічний опис G60N04K Goford Semiconductor
Description: MOSFET N-CH 40V 60A TO-252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 7mOhm @ 30A, 10V, Power Dissipation (Max): 65W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252, Part Status: Active, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 20 V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V.
Інші пропозиції G60N04K за ціною від 14.32 грн до 82.76 грн
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G60N04K | Виробник : Goford Semiconductor |
Description: N40V,RD(MAX)<7M@10V,RD(MAX)<12M@ Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 30A, 10V Power Dissipation (Max): 65W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2014 pF @ 20 V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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G60N04K | Виробник : Goford Semiconductor |
Description: N40V,RD(MAX)<7M@10V,RD(MAX)<12M@ Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 30A, 10V Power Dissipation (Max): 65W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2014 pF @ 20 V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
на замовлення 2367 шт: термін постачання 21-31 дні (днів) |
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| G60N04K | Виробник : GOFORD Semiconductor |
N-CH,40V,RD(max) Less Than 7mOhm at 10V,RD(max) Less Than 12mOhm at 4.5V,VTH 1.1V to 2.5V ,TO-252 |
на замовлення 25000 шт: термін постачання 21-31 дні (днів) |
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