G60N06T Goford Semiconductor
Виробник: Goford Semiconductor
Description: N60V, 50A,RD<17M@10V,VTH1.0V~2.0
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2333 pF @ 30 V
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Технічний опис G60N06T Goford Semiconductor
Category: THT N channel transistors, Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 55A; 60W; TO220, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 60V, Drain current: 55A, Case: TO220, Gate-source voltage: ±20V, Mounting: THT, Kind of channel: enhancement, Gate charge: 39nC, Power dissipation: 60W, Technology: Trench.
Інші пропозиції G60N06T
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| G60N06T | Виробник : GOFORD SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 55A; 60W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 55A Case: TO220 Gate-source voltage: ±20V Mounting: THT Kind of channel: enhancement Gate charge: 39nC Power dissipation: 60W Technology: Trench |
товару немає в наявності |