G700P06LL

G700P06LL Goford Semiconductor


GOFORD-G700P06LL.pdf Виробник: Goford Semiconductor
Description: MOSFET P-CH 60V 5A SOT-23-6L
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3.2A, 10V
FET Feature: Standard
Power Dissipation (Max): 3.1W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1456 pF @ 30 V
на замовлення 12000 шт:

термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+5.24 грн
Мінімальне замовлення: 3000
Відгуки про товар
Написати відгук

Технічний опис G700P06LL Goford Semiconductor

Description: MOSFET P-CH 60V 5A SOT-23-6L, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Tc), Rds On (Max) @ Id, Vgs: 75mOhm @ 3.2A, 10V, FET Feature: Standard, Power Dissipation (Max): 3.1W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-23-6L, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1456 pF @ 30 V.