G7K2N20HE Goford Semiconductor

Виробник: Goford Semiconductor
Description: N200V, ESD,2A,RD<0.7@10V,VTH1V~2
Input Capacitance (Ciss) (Max) @ Vds: 568 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.8W (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)