G800N06S2

G800N06S2 Goford Semiconductor


GOFORD-G800N06S2.pdf Виробник: Goford Semiconductor
Description: MOSFET 2N-CH 60V 3A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 458pF @ 30V
Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 8-SOP
на замовлення 3912 шт:

термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10+31.05 грн
13+ 23.16 грн
100+ 13.87 грн
500+ 12.05 грн
1000+ 8.19 грн
2000+ 7.54 грн
Мінімальне замовлення: 10
Відгуки про товар
Написати відгук

Технічний опис G800N06S2 Goford Semiconductor

Description: MOSFET 2N-CH 60V 3A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.7W (Tc), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 3A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 458pF @ 30V, Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 10V, Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V, FET Feature: Standard, Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: 8-SOP.

Інші пропозиції G800N06S2

Фото Назва Виробник Інформація Доступність
Ціна без ПДВ
G800N06S2 G800N06S2 Виробник : Goford Semiconductor GOFORD-G800N06S2.pdf Description: MOSFET 2N-CH 60V 3A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 458pF @ 30V
Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 8-SOP
товар відсутній