G80N03T Goford Semiconductor
Виробник: Goford Semiconductor
Description: MOSFET N-CH 30V 90A 53.4W 4M(MAX
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
Power Dissipation (Max): 53.4W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 15 V
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 82.30 грн |
| 10+ | 49.51 грн |
| 50+ | 36.65 грн |
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Технічний опис G80N03T Goford Semiconductor
Description: MOSFET N-CH 30V 90A 53.4W 4M(MAX, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V, Power Dissipation (Max): 53.4W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: TO-220, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 15 V.
Інші пропозиції G80N03T
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
G80N03T | GOFORD SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 90A; 53.4W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 90A Power dissipation: 53.4W Case: TO220 Gate-source voltage: ±20V Mounting: THT Gate charge: 36nC Kind of channel: enhancement Technology: Trench |
товару немає в наявності |
В кошику од. на суму грн. |
| G80N03T |
|
Виробник: GOFORD SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 90A; 53.4W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 90A
Power dissipation: 53.4W
Case: TO220
Gate-source voltage: ±20V
Mounting: THT
Gate charge: 36nC
Kind of channel: enhancement
Technology: Trench
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 90A; 53.4W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 90A
Power dissipation: 53.4W
Case: TO220
Gate-source voltage: ±20V
Mounting: THT
Gate charge: 36nC
Kind of channel: enhancement
Technology: Trench
товару немає в наявності
В кошику
од. на суму грн.