G900P15D5 Goford Semiconductor
Виробник: Goford SemiconductorDescription: MOSFET P-CH 150V 60A DFN5*6-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 5A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5000+ | 42.56 грн |
Відгуки про товар
Написати відгук
Технічний опис G900P15D5 Goford Semiconductor
Description: MOSFET P-CH 150V 60A DFN5*6-8L, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 80mOhm @ 5A, 10V, Power Dissipation (Max): 100W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-DFN (4.9x5.75), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V.
Інші пропозиції G900P15D5 за ціною від 53.32 грн до 169.03 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
G900P15D5 | Виробник : Goford Semiconductor |
Description: P-150V,-60A,RD(MAX)<80M@-10V,VTH Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 5A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-DFN (4.9x5.75) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4050 pF @ 75 V |
на замовлення 1216 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
| G900P15D5 | Виробник : GOFORD Semiconductor |
P-150V,-60A,RD(max) Less Than 80mOhm at -10V,VTH -1V to -4V, DFN5x6-8L |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||
|
|
G900P15D5 | Виробник : Goford Semiconductor |
Description: P-150V,-60A,RD(MAX)<80M@-10V,VTH Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 5A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-DFN (4.9x5.75) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4050 pF @ 75 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 75 |
товару немає в наявності |
|||||||||||||
| G900P15D5 | Виробник : GOFORD SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -150V; -35A; 198W; DFN5x6-8 Type of transistor: P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: -150V Drain current: -35A Power dissipation: 198W Case: DFN5x6-8 Gate-source voltage: ±20V Mounting: SMD Gate charge: 27nC Kind of channel: enhancement |
товару немає в наявності |