G900P15M Goford Semiconductor
Виробник: Goford Semiconductor
Description: MOSFET P-CH 150V 35A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ -5A, -10V
Power Dissipation (Max): 198W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ -10 V
Input Capacitance (Ciss) (Max) @ Vds: 4056 pF @ -75 V
| Кількість | Ціна |
|---|---|
| 800+ | 48.06 грн |
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Технічний опис G900P15M Goford Semiconductor
Description: MOSFET P-CH 150V 35A TO-263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), Rds On (Max) @ Id, Vgs: 80mOhm @ -5A, -10V, Power Dissipation (Max): 198W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 27 nC @ -10 V, Input Capacitance (Ciss) (Max) @ Vds: 4056 pF @ -75 V.
Інші пропозиції G900P15M за ціною від 61.26 грн до 185.12 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна | ||||||||
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G900P15M | Виробник : Goford Semiconductor |
Description: MOSFET P-CH 150V 35A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ -5A, -10V Power Dissipation (Max): 198W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4056 pF @ 75 V |
на замовлення 470 шт: термін постачання 21-31 дні (днів) |
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| G900P15M | Виробник : GOFORD Semiconductor |
P-150V,-60A,RD(max) Less Than 80mOhm at -10V,VTH -1V to -4V, TO-263 |
на замовлення 1600 шт: термін постачання 21-31 дні (днів) |
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G900P15M | Виробник : Goford Semiconductor |
Description: MOSFET P-CH 150V 35A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ -5A, -10V Power Dissipation (Max): 198W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4056 pF @ 75 V |
товару немає в наявності |
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| G900P15M | Виробник : GOFORD SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -150V; -35A; 198W; TO263 Type of transistor: P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: -150V Drain current: -35A Power dissipation: 198W Case: TO263 Gate-source voltage: ±20V Mounting: SMD Gate charge: 27nC Kind of channel: enhancement |
товару немає в наявності |