GA03JT12-247 GeneSiC Semiconductor
Виробник: GeneSiC Semiconductor
Description: TRANS SJT 1200V 3A TO247AB
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 315pF @ 800V
Current Drain (Id) - Max: 3 A
Supplier Device Package: TO-247-3
Drain to Source Voltage (Vdss): 1.2 kV
Power - Max: 15 W
Resistance - RDS(On): 470 mOhms
Description: TRANS SJT 1200V 3A TO247AB
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 315pF @ 800V
Current Drain (Id) - Max: 3 A
Supplier Device Package: TO-247-3
Drain to Source Voltage (Vdss): 1.2 kV
Power - Max: 15 W
Resistance - RDS(On): 470 mOhms
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Технічний опис GA03JT12-247 GeneSiC Semiconductor
Description: TRANS SJT 1200V 3A TO247AB, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 175°C, FET Type: N-Channel, Input Capacitance (Ciss) (Max) @ Vds: 315pF @ 800V, Current Drain (Id) - Max: 3 A, Supplier Device Package: TO-247-3, Drain to Source Voltage (Vdss): 1.2 kV, Power - Max: 15 W, Resistance - RDS(On): 470 mOhms.
Інші пропозиції GA03JT12-247
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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GA03JT12-247 | Виробник : GeneSiC Semiconductor |
 JFET SiC Super Junc Trans 1200V-Rds 550mO-3A |
товару немає в наявності |