GA03JT12-247 GeneSiC Semiconductor

Description: TRANS SJT 1200V 3A TO247AB, Resistance - RDS(On): 470 mOhms, Power - Max: 15 W, Drain to Source Voltage (Vdss): 1.2 kV, Supplier Device Package: TO-247-3, Current Drain (Id) - Max: 3 A, Input Capacitance (Ciss) (Max) @ Vds: 315pF @ 800V, FET Type: N-Channel, Operating Temperature: 175°C, Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.