GA04JT17-247 GeneSiC Semiconductor
Виробник: GeneSiC Semiconductor
Description: TRANS SJT 1700V 4A TO247AB
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
Current - Continuous Drain (Id) @ 25°C: 4A (Tc) (95°C)
Rds On (Max) @ Id, Vgs: 480mOhm @ 4A
Power Dissipation (Max): 106W (Tc)
Supplier Device Package: TO-247AB
Drain to Source Voltage (Vdss): 1700 V
Description: TRANS SJT 1700V 4A TO247AB
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
Current - Continuous Drain (Id) @ 25°C: 4A (Tc) (95°C)
Rds On (Max) @ Id, Vgs: 480mOhm @ 4A
Power Dissipation (Max): 106W (Tc)
Supplier Device Package: TO-247AB
Drain to Source Voltage (Vdss): 1700 V
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Технічний опис GA04JT17-247 GeneSiC Semiconductor
Description: TRANS SJT 1700V 4A TO247AB, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Technology: SiC (Silicon Carbide Junction Transistor), Current - Continuous Drain (Id) @ 25°C: 4A (Tc) (95°C), Rds On (Max) @ Id, Vgs: 480mOhm @ 4A, Power Dissipation (Max): 106W (Tc), Supplier Device Package: TO-247AB, Drain to Source Voltage (Vdss): 1700 V.
Інші пропозиції GA04JT17-247
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
GA04JT17-247 | Виробник : GeneSiC Semiconductor |
 MOSFET SiC Supr Jnctn Trans 1700V-Rds 500mO-4A |
товару немає в наявності |