GA08JT17-247 GeneSiC Semiconductor

Description: TRANS SJT 1700V 8A TO247AB, Resistance - RDS(On): 230 mOhms, Power - Max: 48 W, Current Drain (Id) - Max: 8 A, Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 800V, Drain to Source Voltage (Vdss): 1.7 kV, Supplier Device Package: TO-247-3, Power Dissipation (Max): 48W (Tc), Rds On (Max) @ Id, Vgs: 250mOhm @ 8A, Current - Continuous Drain (Id) @ 25°C: 8A (Tc) (90°C), FET Type: N-Channel, Technology: SiC (Silicon Carbide Junction Transistor), Operating Temperature: 175°C, Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.