GA50JT12-247 GeneSiC Semiconductor

Description: TRANS SJT 1200V 100A TO247AB, Current - Drain (Idss) @ Vds (Vgs=0): 10 µA @ 1.2 kV, Resistance - RDS(On): 20 mOhms, Power - Max: 583 W, Drain to Source Voltage (Vdss): 1.2 kV, Supplier Device Package: TO-247-3, Current Drain (Id) - Max: 100 A, Input Capacitance (Ciss) (Max) @ Vds: 7080pF @ 800V, FET Type: N-Channel, Operating Temperature: 175°C, Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.