GAN039-650NBBHP Nexperia USA Inc.
Виробник: Nexperia USA Inc.
Description: 650 V, 33 MOHM GALLIUM NITRIDE (
Packaging: Cut Tape (CT)
Package / Case: 12-BESOP (0.370", 9.40mm Width), Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 32A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 1mA
Supplier Device Package: CCPAK1212
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
Description: 650 V, 33 MOHM GALLIUM NITRIDE (
Packaging: Cut Tape (CT)
Package / Case: 12-BESOP (0.370", 9.40mm Width), Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 32A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 1mA
Supplier Device Package: CCPAK1212
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
на замовлення 935 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 1456.33 грн |
| 10+ | 1202.53 грн |
| 100+ | 1001.88 грн |
| 500+ | 829.29 грн |
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Технічний опис GAN039-650NBBHP Nexperia USA Inc.
Description: 650 V, 33 MOHM GALLIUM NITRIDE (, Packaging: Tape & Reel (TR), Package / Case: 12-BESOP (0.370", 9.40mm Width), Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 39mOhm @ 32A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4.8V @ 1mA, Supplier Device Package: CCPAK1212, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V.
Інші пропозиції GAN039-650NBBHP за ціною від 752.60 грн до 1567.25 грн
| Фото | Назва | Виробник | Інформація |
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GAN039-650NBBHP | Виробник : Nexperia | GaN FETs 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package |
на замовлення 55 шт: термін постачання 21-30 дні (днів) |
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GAN039-650NBBHP | Виробник : Nexperia |
 Trans MOSFET N-CH GaN 650V 60A 12-Pin CCPAK |
товару немає в наявності |
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GAN039-650NBBHP | Виробник : Nexperia |
Trans MOSFET N-CH GaN 650V 60A 12-Pin CCPAK |
товару немає в наявності |
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GAN039-650NBBHP | Виробник : Nexperia USA Inc. |
Description: 650 V, 33 MOHM GALLIUM NITRIDE ( Packaging: Tape & Reel (TR) Package / Case: 12-BESOP (0.370", 9.40mm Width), Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 39mOhm @ 32A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4.8V @ 1mA Supplier Device Package: CCPAK1212 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V |
товару немає в наявності |