GAN080-650EBEZ Nexperia USA Inc.
Виробник: Nexperia USA Inc.Description: 650 V, 80 MOHM GALLIUM NITRIDE (
Packaging: Cut Tape (CT)
Part Status: Active
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 8A, 6V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 30.7mA
Supplier Device Package: DFN8080-8
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -6V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 400 V
на замовлення 1026 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 470.78 грн |
| 10+ | 448.98 грн |
| 100+ | 422.10 грн |
| 500+ | 367.74 грн |
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Технічний опис GAN080-650EBEZ Nexperia USA Inc.
Description: 650 V, 80 MOHM GALLIUM NITRIDE (, Packaging: Tape & Reel (TR), Part Status: Active, Package / Case: 8-VDFN Exposed Pad, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 29A (Tc), Rds On (Max) @ Id, Vgs: 80mOhm @ 8A, 6V, Power Dissipation (Max): 240W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 30.7mA, Supplier Device Package: DFN8080-8, Drive Voltage (Max Rds On, Min Rds On): 6V, Vgs (Max): +7V, -6V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 6 V, Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 400 V.
Інші пропозиції GAN080-650EBEZ за ціною від 287.69 грн до 548.84 грн
| Фото | Назва | Виробник | Інформація |
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GAN080-650EBEZ | Виробник : NEXPERIA |
Description: NEXPERIA - GAN080-650EBEZ - Galliumnitrid (GaN)-Transistor, 650 V, 29 A, 0.06 ohm, 6.2 nC, DFN8080, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 29A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 6.2nC Bauform - Transistor: DFN8080 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Drain-Source-Durchgangswiderstand: 0.06ohm SVHC: No SVHC (27-Jun-2024) |
на замовлення 4019 шт: термін постачання 21-31 дні (днів) |
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GAN080-650EBEZ | Виробник : NEXPERIA |
Description: NEXPERIA - GAN080-650EBEZ - Galliumnitrid (GaN)-Transistor, 650 V, 29 A, 0.06 ohm, 6.2 nC, DFN8080, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 29A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 euEccn: NLR Gate-Ladung, typ.: 6.2nC Bauform - Transistor: DFN8080 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Drain-Source-Durchgangswiderstand: 0.06ohm SVHC: No SVHC (27-Jun-2024) |
на замовлення 4019 шт: термін постачання 21-31 дні (днів) |
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GAN080-650EBEZ | Виробник : Nexperia |
GaN FETs SOT8074 650V 29A FET |
на замовлення 1063 шт: термін постачання 21-30 дні (днів) |
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| GAN080-650EBEZ | Виробник : NEXPERIA |
GAN080-650EBE/SOT8074/DFN8080- |
товару немає в наявності |
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| GAN080-650EBEZ | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 29A; Idm: 58A; 240W Type of transistor: N-JFET Technology: GaN Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 650V Drain current: 29A Pulsed drain current: 58A Case: DFN8080-8 Gate-source voltage: -6...7V On-state resistance: 80mΩ Mounting: SMD Gate charge: 6.2nC Kind of package: tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Power dissipation: 240W кількість в упаковці: 2500 шт |
товару немає в наявності |
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GAN080-650EBEZ | Виробник : Nexperia USA Inc. |
Description: 650 V, 80 MOHM GALLIUM NITRIDE ( Packaging: Tape & Reel (TR) Part Status: Active Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 8A, 6V Power Dissipation (Max): 240W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 30.7mA Supplier Device Package: DFN8080-8 Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): +7V, -6V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 400 V |
товару немає в наявності |
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| GAN080-650EBEZ | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 29A; Idm: 58A; 240W Type of transistor: N-JFET Technology: GaN Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 650V Drain current: 29A Pulsed drain current: 58A Case: DFN8080-8 Gate-source voltage: -6...7V On-state resistance: 80mΩ Mounting: SMD Gate charge: 6.2nC Kind of package: tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Power dissipation: 240W |
товару немає в наявності |