GANB8R0-040CBAZ Nexperia USA Inc.
Виробник: Nexperia USA Inc.
Description: GANB8R0-040CBA/SOT8087/WLCSP16
Packaging: Tape & Reel (TR)
Package / Case: 16-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 10A, 5V
Power Dissipation (Max): 15W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: 16-WLCSP (1.7x1.7)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): 6V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 566 pF @ 20 V
Відгуки про товар
Написати відгук
Технічний опис GANB8R0-040CBAZ Nexperia USA Inc.
Description: GANB8R0-040CBA/SOT8087/WLCSP16, Packaging: Tape & Reel (TR), Package / Case: 16-UFBGA, WLCSP, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 125°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Tc), Rds On (Max) @ Id, Vgs: 8mOhm @ 10A, 5V, Power Dissipation (Max): 15W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 1mA, Supplier Device Package: 16-WLCSP (1.7x1.7), Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): 6V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 10.1 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 566 pF @ 20 V.
Інші пропозиції GANB8R0-040CBAZ за ціною від 39.03 грн до 226.47 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
GANB8R0-040CBAZ | NEXPERIA |
Description: NEXPERIA - GANB8R0-040CBAZ - Galliumnitrid (GaN)-Transistor, 14 A, 10.1 nC, WLCSP, Oberflächenmontage tariffCode: 85412900 productTraceability: Yes-Date/Lot Code SVHC: No SVHC (25-Jun-2025) rohsCompliant: YES euEccn: NLR isCanonical: N hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
|
GANB8R0-040CBAZ | Nexperia USA Inc. |
Description: GANB8R0-040CBA/SOT8087/WLCSP16 Packaging: Cut Tape (CT) Package / Case: 16-UFBGA, WLCSP Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 10A, 5V Power Dissipation (Max): 15W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 1mA Supplier Device Package: 16-WLCSP (1.7x1.7) Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): 6V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 10.1 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 566 pF @ 20 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
 |
GANB8R0-040CBAZ | Nexperia |
GaN FETs GANB8R0-040CBA/SOT8087/WLCSP16 |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
|
GANB8R0-040CBAZ | NEXPERIA |
Description: NEXPERIA - GANB8R0-040CBAZ - Galliumnitrid (GaN)-Transistor, 14 A, 10.1 nC, WLCSP, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: - rohsCompliant: YES Dauer-Drainstrom Id: 14A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Gate-Ladung, typ.: 10.1nC SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: WLCSP Anzahl der Pins: 16Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Drain-Source-Durchgangswiderstand: - |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
|
| GANB8R0-040CBAZ |
|
Виробник: NEXPERIA
Description: NEXPERIA - GANB8R0-040CBAZ - Galliumnitrid (GaN)-Transistor, 14 A, 10.1 nC, WLCSP, Oberflächenmontage
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
SVHC: No SVHC (25-Jun-2025)
rohsCompliant: YES
euEccn: NLR
isCanonical: N
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Description: NEXPERIA - GANB8R0-040CBAZ - Galliumnitrid (GaN)-Transistor, 14 A, 10.1 nC, WLCSP, Oberflächenmontage
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
SVHC: No SVHC (25-Jun-2025)
rohsCompliant: YES
euEccn: NLR
isCanonical: N
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 100+ | 100.20 грн |
| 500+ | 74.36 грн |
| 1000+ | 63.05 грн |
| 5000+ | 51.39 грн |
| GANB8R0-040CBAZ |
|
Виробник: Nexperia USA Inc.
Description: GANB8R0-040CBA/SOT8087/WLCSP16
Packaging: Cut Tape (CT)
Package / Case: 16-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 10A, 5V
Power Dissipation (Max): 15W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: 16-WLCSP (1.7x1.7)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): 6V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 566 pF @ 20 V
Description: GANB8R0-040CBA/SOT8087/WLCSP16
Packaging: Cut Tape (CT)
Package / Case: 16-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 10A, 5V
Power Dissipation (Max): 15W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: 16-WLCSP (1.7x1.7)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): 6V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 566 pF @ 20 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 163.40 грн |
| 10+ | 100.91 грн |
| 100+ | 68.63 грн |
| 500+ | 51.45 грн |
| 1000+ | 47.28 грн |
| GANB8R0-040CBAZ |
|
Виробник: Nexperia
GaN FETs GANB8R0-040CBA/SOT8087/WLCSP16
GaN FETs GANB8R0-040CBA/SOT8087/WLCSP16
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 170.26 грн |
| 10+ | 107.60 грн |
| 100+ | 63.68 грн |
| 500+ | 50.83 грн |
| 1000+ | 46.71 грн |
| 2500+ | 42.25 грн |
| 5000+ | 39.03 грн |
| GANB8R0-040CBAZ |
|
Виробник: NEXPERIA
Description: NEXPERIA - GANB8R0-040CBAZ - Galliumnitrid (GaN)-Transistor, 14 A, 10.1 nC, WLCSP, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: -
rohsCompliant: YES
Dauer-Drainstrom Id: 14A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Ladung, typ.: 10.1nC
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: WLCSP
Anzahl der Pins: 16Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Drain-Source-Durchgangswiderstand: -
Description: NEXPERIA - GANB8R0-040CBAZ - Galliumnitrid (GaN)-Transistor, 14 A, 10.1 nC, WLCSP, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: -
rohsCompliant: YES
Dauer-Drainstrom Id: 14A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Ladung, typ.: 10.1nC
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: WLCSP
Anzahl der Pins: 16Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Drain-Source-Durchgangswiderstand: -
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 226.47 грн |
| 10+ | 146.64 грн |
| 100+ | 100.20 грн |
| 500+ | 74.36 грн |
| 1000+ | 63.05 грн |
| 5000+ | 51.39 грн |