| Кількість | Ціна |
|---|---|
| 2+ | 181.32 грн |
| 10+ | 118.09 грн |
| 100+ | 70.08 грн |
| 500+ | 59.05 грн |
| 1000+ | 52.25 грн |
| 2500+ | 45.52 грн |
| 5000+ | 42.67 грн |
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Технічний опис GANE350-700BBAZ Nexperia
Description: GANE350-700BBA/SOT428/DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C, Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 350mOhm @ 2.2A, 6V, Power Dissipation (Max): 47W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 6.6mA, Supplier Device Package: TO-252, Drive Voltage (Max Rds On, Min Rds On): 6V, Vgs (Max): +7V, -1.4V, Drain to Source Voltage (Vdss): 700 V, Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 6 V, Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 400 V.
Інші пропозиції GANE350-700BBAZ за ціною від 106.96 грн до 172.51 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
| GANE350-700BBAZ | Виробник : Nexperia USA Inc. |
 Description: GANE350-700BBA/SOT428/DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 2.2A, 6V Power Dissipation (Max): 47W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 6.6mA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): +7V, -1.4V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 400 V |
на замовлення 15 шт: термін постачання 21-31 дні (днів) |
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| GANE350-700BBAZ | Виробник : Nexperia USA Inc. |
Description: GANE350-700BBA/SOT428/DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 2.2A, 6V Power Dissipation (Max): 47W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 6.6mA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): +7V, -1.4V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 400 V |
товару немає в наявності |