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GB01SLT12-252

GB01SLT12-252 GeneSiC Semiconductor

GB01SLT12_252-2449973.pdf
Виробник: GeneSiC Semiconductor
Schottky Diodes & Rectifiers 1200V 1A SiC Schottky Rectifier
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Технічний опис GB01SLT12-252 GeneSiC Semiconductor

Description: DIODE SIL CARBIDE 1.2KV 1A TO252, Current - Reverse Leakage @ Vr: 2 µA @ 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 1 A, Voltage - DC Reverse (Vr) (Max): 1200 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: TO-252, Current - Average Rectified (Io): 1A, Capacitance @ Vr, F: 69pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).

Інші пропозиції GB01SLT12-252

Фото Назва Виробник Інформація Доступність Ціна
GB01SLT12-252 GB01SLT12-252 GeneSiC Semiconductor GB01SLT12-252.pdf Description: DIODE SIL CARBIDE 1.2KV 1A TO252
Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-252
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 69pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику  од. на суму  грн.
GB01SLT12-252 GB01SLT12-252 GeneSiC Semiconductor GB01SLT12-252.pdf Description: DIODE SIL CARBIDE 1.2KV 1A TO252
Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-252
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 69pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
GB01SLT12-252 GB01SLT12-252.pdf
GB01SLT12-252
Виробник: GeneSiC Semiconductor
Description: DIODE SIL CARBIDE 1.2KV 1A TO252
Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-252
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 69pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику  од. на суму  грн.
GB01SLT12-252 GB01SLT12-252.pdf
GB01SLT12-252
Виробник: GeneSiC Semiconductor
Description: DIODE SIL CARBIDE 1.2KV 1A TO252
Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-252
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 69pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.