Технічний опис GB05MPS17-247 GeneSiC Semiconductor
Description: DIODE SIL CARB 1700V 25A TO2472, Voltage - DC Reverse (Vr) (Max): 1700 V, Part Status: Obsolete, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: TO-247-2, Current - Average Rectified (Io): 25A, Capacitance @ Vr, F: 334pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-247-2, Packaging: Tube, Current - Reverse Leakage @ Vr: 6 µA @ 1700 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A.
Інші пропозиції GB05MPS17-247
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
GB05MPS17-247 | GeneSiC Semiconductor |
 Description: DIODE SIL CARB 1700V 25A TO2472Voltage - DC Reverse (Vr) (Max): 1700 V Part Status: Obsolete Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-247-2 Current - Average Rectified (Io): 25A Capacitance @ Vr, F: 334pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-247-2 Packaging: Tube Current - Reverse Leakage @ Vr: 6 µA @ 1700 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A |
товару немає в наявності |
Мінімальне замовлення: 1200 шт В кошику од. на суму грн. |
| GB05MPS17-247 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SIL CARB 1700V 25A TO2472
Voltage - DC Reverse (Vr) (Max): 1700 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-2
Current - Average Rectified (Io): 25A
Capacitance @ Vr, F: 334pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 6 µA @ 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Description: DIODE SIL CARB 1700V 25A TO2472
Voltage - DC Reverse (Vr) (Max): 1700 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-2
Current - Average Rectified (Io): 25A
Capacitance @ Vr, F: 334pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 6 µA @ 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
товару немає в наявності
Мінімальне замовлення: 1200 шт
В кошику
од. на суму грн.