Технічний опис GB10MPS17-247 GeneSiC Semiconductor
Description: DIODE SIL CARB 1700V 50A TO2472, Current - Reverse Leakage @ Vr: 12 µA @ 1700 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A, Voltage - DC Reverse (Vr) (Max): 1700 V, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: TO-247-2, Current - Average Rectified (Io): 50A, Capacitance @ Vr, F: 669pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-247-2, Packaging: Tube.
Інші пропозиції GB10MPS17-247
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
GB10MPS17-247 | GeneSiC Semiconductor |
 Description: DIODE SIL CARB 1700V 50A TO2472Current - Reverse Leakage @ Vr: 12 µA @ 1700 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A Voltage - DC Reverse (Vr) (Max): 1700 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-247-2 Current - Average Rectified (Io): 50A Capacitance @ Vr, F: 669pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-247-2 Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 600 шт В кошику од. на суму грн. |
 |
GB10MPS17-247 | GeneSiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 10A; TO247-2; tube Case: TO247-2 Mounting: THT Kind of package: tube Features of semiconductor devices: MPS Type of diode: Schottky rectifying Technology: SiC Semiconductor structure: single diode Max. forward voltage: 1.5V Load current: 10A Max. forward impulse current: 87A Max. off-state voltage: 1.7kV |
товару немає в наявності |
Мінімальне замовлення: 600 шт В кошику од. на суму грн. |
| GB10MPS17-247 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SIL CARB 1700V 50A TO2472
Current - Reverse Leakage @ Vr: 12 µA @ 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1700 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-2
Current - Average Rectified (Io): 50A
Capacitance @ Vr, F: 669pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
Description: DIODE SIL CARB 1700V 50A TO2472
Current - Reverse Leakage @ Vr: 12 µA @ 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1700 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-2
Current - Average Rectified (Io): 50A
Capacitance @ Vr, F: 669pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 600 шт
В кошику
од. на суму грн.
| GB10MPS17-247 |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 10A; TO247-2; tube
Case: TO247-2
Mounting: THT
Kind of package: tube
Features of semiconductor devices: MPS
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Max. forward voltage: 1.5V
Load current: 10A
Max. forward impulse current: 87A
Max. off-state voltage: 1.7kV
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 10A; TO247-2; tube
Case: TO247-2
Mounting: THT
Kind of package: tube
Features of semiconductor devices: MPS
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Max. forward voltage: 1.5V
Load current: 10A
Max. forward impulse current: 87A
Max. off-state voltage: 1.7kV
товару немає в наявності
Мінімальне замовлення: 600 шт
В кошику
од. на суму грн.