Технічний опис GBJ1010-G Comchip Technology
Description: BRIDGE RECT 1PHASE 1KV 10A GBJ, Packaging: Tube, Package / Case: 4-SIP, GBJ, Mounting Type: Through Hole, Diode Type: Single Phase, Operating Temperature: -55°C ~ 150°C (TJ), Technology: Standard, Supplier Device Package: GBJ, Voltage - Peak Reverse (Max): 1 kV, Current - Average Rectified (Io): 10 A, Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A, Current - Reverse Leakage @ Vr: 10 µA @ 1000 V.
Інші пропозиції GBJ1010-G
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GBJ1010-G | Виробник : Comchip Technology |
 Description: BRIDGE RECT 1PHASE 1KV 10A GBJPackaging: Tube Package / Case: 4-SIP, GBJ Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBJ Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 10 A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
товару немає в наявності |
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GBJ1010-G | Виробник : Comchip Technology |
Bridge Rectifiers DIODE RECT BRIDGE GPP 10A 1000V |
товару немає в наявності |