Технічний опис GBJ1510G LTTSC
Description: BRIDGE RECT, Current - Reverse Leakage @ Vr: 10 µA @ 1000 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 7.5 A, Current - Average Rectified (Io): 15 A, Voltage - Peak Reverse (Max): 1 kV, Part Status: Obsolete, Supplier Device Package: GBJ, Technology: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Diode Type: Single Phase, Mounting Type: Through Hole, Package / Case: 4-SIP, GBJ, Packaging: Bulk.
Інші пропозиції GBJ1510G
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
| GBJ1510-G | Comchip Technology |
Description: BRIDGE RECT Current - Reverse Leakage @ Vr: 10 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 7.5 A Current - Average Rectified (Io): 15 A Voltage - Peak Reverse (Max): 1 kV Part Status: Obsolete Supplier Device Package: GBJ Technology: Standard Operating Temperature: -55°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-SIP, GBJ Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. |
| GBJ1510-G |
Виробник: Comchip Technology
Description: BRIDGE RECT
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 7.5 A
Current - Average Rectified (Io): 15 A
Voltage - Peak Reverse (Max): 1 kV
Part Status: Obsolete
Supplier Device Package: GBJ
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBJ
Packaging: Bulk
Description: BRIDGE RECT
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 7.5 A
Current - Average Rectified (Io): 15 A
Voltage - Peak Reverse (Max): 1 kV
Part Status: Obsolete
Supplier Device Package: GBJ
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBJ
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.