GBLA10-E3/45 Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 1KV 3A GBL
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Average Rectified (Io): 3 A
Voltage - Peak Reverse (Max): 1 kV
Supplier Device Package: GBL
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBL
Packaging: Tube
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Технічний опис GBLA10-E3/45 Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 1KV 3A GBL, Current - Reverse Leakage @ Vr: 5 µA @ 1000 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A, Current - Average Rectified (Io): 3 A, Voltage - Peak Reverse (Max): 1 kV, Supplier Device Package: GBL, Technology: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Diode Type: Single Phase, Mounting Type: Through Hole, Package / Case: 4-SIP, GBL, Packaging: Tube.
Інші пропозиції GBLA10-E3/45
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| GBLA10-E3/45 | Виробник : Vishay Semiconductors |
Bridge Rectifiers 1000 Volt 4.0 Amp Glass Passivated |
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