Технічний опис GBU12M-T Diotec Semiconductor
Description: 1BRect, 1000V, 12A, Current - Reverse Leakage @ Vr: 5 µA @ 1000 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 12 A, Current - Average Rectified (Io): 8.4 A, Voltage - Peak Reverse (Max): 1 kV, Part Status: Active, Supplier Device Package: GBU, Technology: Standard, Operating Temperature: -50°C ~ 150°C (TJ), Diode Type: Single Phase, Mounting Type: Through Hole, Package / Case: 4-SIP, GBU, Packaging: Tube.
Інші пропозиції GBU12M-T
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
|
GBU12M-T | Diotec Semiconductor |
Description: 1BRect, 1000V, 12ACurrent - Reverse Leakage @ Vr: 5 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 12 A Current - Average Rectified (Io): 8.4 A Voltage - Peak Reverse (Max): 1 kV Part Status: Active Supplier Device Package: GBU Technology: Standard Operating Temperature: -50°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: Through Hole Package / Case: 4-SIP, GBU Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. |
|
GBU12M-T | Diotec Semiconductor AG |
Description: Bridge, 1-ph, GBU, 1000V, 12APackaging: Tube Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -50°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 8.4 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 12 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
товару немає в наявності |
В кошику од. на суму грн. |
| GBU12M-T |
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Виробник: Diotec Semiconductor
Description: 1BRect, 1000V, 12A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 12 A
Current - Average Rectified (Io): 8.4 A
Voltage - Peak Reverse (Max): 1 kV
Part Status: Active
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -50°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Packaging: Tube
Description: 1BRect, 1000V, 12A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 12 A
Current - Average Rectified (Io): 8.4 A
Voltage - Peak Reverse (Max): 1 kV
Part Status: Active
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -50°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| GBU12M-T |
![]() |
Виробник: Diotec Semiconductor AG
Description: Bridge, 1-ph, GBU, 1000V, 12A
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 8.4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 12 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: Bridge, 1-ph, GBU, 1000V, 12A
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 8.4 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 12 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товару немає в наявності
В кошику
од. на суму грн.




