Технічний опис GBU801HD2G Taiwan Semiconductor
Description: BRIDGE RECT 1PHASE 50V 8A GBU, Packaging: Tube, Package / Case: 4-SIP, GBU, Mounting Type: Through Hole, Diode Type: Single Phase, Operating Temperature: -55°C ~ 150°C (TJ), Technology: Standard, Supplier Device Package: GBU, Grade: Automotive, Voltage - Peak Reverse (Max): 50 V, Current - Average Rectified (Io): 8 A, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A, Current - Reverse Leakage @ Vr: 5 µA @ 50 V, Qualification: AEC-Q101.
Інші пропозиції GBU801HD2G
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GBU801HD2G | Виробник : Taiwan Semiconductor Corporation |
![]() Packaging: Tube Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Grade: Automotive Voltage - Peak Reverse (Max): 50 V Current - Average Rectified (Io): 8 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A Current - Reverse Leakage @ Vr: 5 µA @ 50 V Qualification: AEC-Q101 |
товару немає в наявності |
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GBU801HD2G | Виробник : Taiwan Semiconductor |
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товару немає в наявності |