GBU803H Taiwan Semiconductor Corporation

Description: DIODE BRIDGE 8A 200V GBU, Qualification: AEC-Q101, Grade: Automotive, Package / Case: 4-ESIP, GBU, Packaging: Tube, Current - Reverse Leakage @ Vr: 5 µA @ 200 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A, Current - Average Rectified (Io): 8 A, Voltage - Peak Reverse (Max): 200 V, Part Status: Active, Supplier Device Package: GBU, Technology: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Diode Type: Single Phase, Mounting Type: Through Hole.