GC02MPS12-220 GeneSiC Semiconductor
| Кількість | Ціна |
|---|---|
| 2+ | 167.75 грн |
| 10+ | 145.09 грн |
| 25+ | 119.12 грн |
| 100+ | 109.25 грн |
| 250+ | 103.61 грн |
| 500+ | 98.68 грн |
| 1000+ | 94.45 грн |
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Технічний опис GC02MPS12-220 GeneSiC Semiconductor
Description: DIODE SIL CARB 1200V 12A TO220, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 127pF @ 1V, 1MHz, Current - Average Rectified (Io): 12A, Supplier Device Package: TO-220-2, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A, Current - Reverse Leakage @ Vr: 2 µA @ 1200 V.
Інші пропозиції GC02MPS12-220
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
GC02MPS12-220 | GeneSiC Semiconductor |
 Description: DIODE SIL CARB 1200V 12A TO220Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 127pF @ 1V, 1MHz Current - Average Rectified (Io): 12A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A Current - Reverse Leakage @ Vr: 2 µA @ 1200 V |
товару немає в наявності |
Мінімальне замовлення: 12000 шт В кошику од. на суму грн. |
| GC02MPS12-220 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SIL CARB 1200V 12A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 127pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
Description: DIODE SIL CARB 1200V 12A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 127pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
товару немає в наявності
Мінімальне замовлення: 12000 шт
В кошику
од. на суму грн.