GC05MPS12-220 GeneSiC Semiconductor
Виробник: GeneSiC SemiconductorDescription: DIODE SIL CARB 1200V 29A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 359pF @ 1V, 1MHz
Current - Average Rectified (Io): 29A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 4 µA @ 1200 V
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Технічний опис GC05MPS12-220 GeneSiC Semiconductor
Description: DIODE SIL CARB 1200V 29A TO220, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 359pF @ 1V, 1MHz, Current - Average Rectified (Io): 29A, Supplier Device Package: TO-220-2, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Not For New Designs, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A, Current - Reverse Leakage @ Vr: 4 µA @ 1200 V.
Інші пропозиції GC05MPS12-220
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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GC05MPS12-220 | Виробник : GeneSiC Semiconductor |
Schottky Diodes & Rectifiers Silicon Carbide (SiC) Merged PiN Schottky (MPS) Diode 1200V 5A TO-220-2 |
товару немає в наявності |