Технічний опис GC08MPS12-220 GeneSiC Semiconductor
Description: DIODE SIL CARB 1200V 43A TO220, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 545pF @ 1V, 1MHz, Current - Average Rectified (Io): 43A, Supplier Device Package: TO-220-2, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Obsolete, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A, Current - Reverse Leakage @ Vr: 7 µA @ 1200 V.
Інші пропозиції GC08MPS12-220
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
GC08MPS12-220 | GeneSiC Semiconductor |
 Description: DIODE SIL CARB 1200V 43A TO220Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 545pF @ 1V, 1MHz Current - Average Rectified (Io): 43A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A Current - Reverse Leakage @ Vr: 7 µA @ 1200 V |
товару немає в наявності |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. |
 |
GC08MPS12-220 | GeneSiC SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 8A; TO220-2; tube Mounting: THT Features of semiconductor devices: MPS Type of diode: Schottky rectifying Technology: SiC Semiconductor structure: single diode Case: TO220-2 Kind of package: tube Max. forward voltage: 1.5V Load current: 8A Max. forward impulse current: 60A Max. off-state voltage: 1.2kV |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. |
| GC08MPS12-220 |
|
Виробник: GeneSiC Semiconductor
Description: DIODE SIL CARB 1200V 43A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 545pF @ 1V, 1MHz
Current - Average Rectified (Io): 43A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Current - Reverse Leakage @ Vr: 7 µA @ 1200 V
Description: DIODE SIL CARB 1200V 43A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 545pF @ 1V, 1MHz
Current - Average Rectified (Io): 43A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Current - Reverse Leakage @ Vr: 7 µA @ 1200 V
товару немає в наявності
Мінімальне замовлення: 8000 шт
В кошику
од. на суму грн.
| GC08MPS12-220 |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 8A; TO220-2; tube
Mounting: THT
Features of semiconductor devices: MPS
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Case: TO220-2
Kind of package: tube
Max. forward voltage: 1.5V
Load current: 8A
Max. forward impulse current: 60A
Max. off-state voltage: 1.2kV
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 8A; TO220-2; tube
Mounting: THT
Features of semiconductor devices: MPS
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Case: TO220-2
Kind of package: tube
Max. forward voltage: 1.5V
Load current: 8A
Max. forward impulse current: 60A
Max. off-state voltage: 1.2kV
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.