Технічний опис GC10MPS12-252 GeneSiC Semiconductor
Description: DIODE SIL CARB 1200V 50A TO2522, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 660pF @ 1V, 1MHz, Current - Average Rectified (Io): 50A, Supplier Device Package: TO-252-2, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A, Current - Reverse Leakage @ Vr: 10 µA @ 1200 V.
Інші пропозиції GC10MPS12-252
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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GC10MPS12-252 | Виробник : GeneSiC Semiconductor |
 Diode Schottky SiC 1.2KV 28A 3-Pin(2+Tab) TO-252 |
товару немає в наявності |
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| GC10MPS12-252 | Виробник : GeneSiC SEMICONDUCTOR |
GC10MPS12-252 SMD Schottky diodes |
товару немає в наявності |
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GC10MPS12-252 | Виробник : GeneSiC Semiconductor |
Description: DIODE SIL CARB 1200V 50A TO2522 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 660pF @ 1V, 1MHz Current - Average Rectified (Io): 50A Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 1200 V |
товару немає в наявності |
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GC10MPS12-252 | Виробник : GeneSiC Semiconductor |
Description: DIODE SIL CARB 1200V 50A TO2522 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 660pF @ 1V, 1MHz Current - Average Rectified (Io): 50A Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 1200 V |
товару немає в наявності |
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GC10MPS12-252 | Виробник : GeneSiC Semiconductor |
Schottky Diodes & Rectifiers 1200V 10A TO-252-2 SiC Schottky MPS |
товару немає в наявності |