GC20N65QD Goford Semiconductor
Виробник: Goford Semiconductor
Description: MOSFET N-CH 650V 20A TO-247
Packaging: Tube
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1729 pF @ 400 V
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 374.28 грн |
| 10+ | 239.91 грн |
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Технічний опис GC20N65QD Goford Semiconductor
Description: MOSFET N-CH 650V 20A TO-247, Packaging: Tube, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V, Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1729 pF @ 400 V.
Інші пропозиції GC20N65QD
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| GC20N65QD | GOFORD SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 650V; 20A; 151W; TO247 Type of transistor: N-MOSFET Technology: SJ-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Power dissipation: 151W Case: TO247 Gate-source voltage: ±30V Mounting: THT Kind of channel: enhancement Gate charge: 39nC |
товару немає в наявності |
В кошику од. на суму грн. |
| GC20N65QD |
|
Виробник: GOFORD SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 650V; 20A; 151W; TO247
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 151W
Case: TO247
Gate-source voltage: ±30V
Mounting: THT
Kind of channel: enhancement
Gate charge: 39nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 650V; 20A; 151W; TO247
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 151W
Case: TO247
Gate-source voltage: ±30V
Mounting: THT
Kind of channel: enhancement
Gate charge: 39nC
товару немає в наявності
В кошику
од. на суму грн.