Технічний опис GC20N65T Goford Semiconductor
Category: THT N channel transistors, Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 650V; 20A; 151W; TO220, Type of transistor: N-MOSFET, Technology: SJ-MOSFET, Polarisation: unipolar, Drain-source voltage: 650V, Drain current: 20A, Power dissipation: 151W, Case: TO220, Gate-source voltage: ±30V, Mounting: THT, Kind of channel: enhancement, Gate charge: 39nC.
Інші пропозиції GC20N65T
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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GC20N65T | GOFORD SEMICONDUCTOR |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 650V; 20A; 151W; TO220 Type of transistor: N-MOSFET Technology: SJ-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Power dissipation: 151W Case: TO220 Gate-source voltage: ±30V Mounting: THT Kind of channel: enhancement Gate charge: 39nC |
товару немає в наявності |
В кошику од. на суму грн. |
| GC20N65T |
|
Виробник: GOFORD SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 650V; 20A; 151W; TO220
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 151W
Case: TO220
Gate-source voltage: ±30V
Mounting: THT
Kind of channel: enhancement
Gate charge: 39nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 650V; 20A; 151W; TO220
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 151W
Case: TO220
Gate-source voltage: ±30V
Mounting: THT
Kind of channel: enhancement
Gate charge: 39nC
товару немає в наявності
В кошику
од. на суму грн.