GC210N80FE Goford Semiconductor
Виробник: Goford SemiconductorDescription: MOSFET,N-CH,800V,17A,51W,TO-220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 8.5A, 10V
Power Dissipation (Max): 51W
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 380 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2000+ | 87.74 грн |
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Технічний опис GC210N80FE Goford Semiconductor
Description: MOSFET N-CH 800V ESD 17A 51W TO-, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), Rds On (Max) @ Id, Vgs: 210mOhm @ 8.5A, 10V, Power Dissipation (Max): 51W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 250µA, Supplier Device Package: TO-220F, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 380 V.
Інші пропозиції GC210N80FE за ціною від 204.22 грн до 320.05 грн
| Фото | Назва | Виробник | Інформація |
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Ціна | ||||||
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GC210N80FE | Виробник : Goford Semiconductor |
Description: MOSFET N-CH 800V ESD 17A 51W TO- Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 210mOhm @ 8.5A, 10V Power Dissipation (Max): 51W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 250µA Supplier Device Package: TO-220F Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 380 V |
на замовлення 50 шт: термін постачання 21-31 дні (днів) |
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| GC210N80FE | Виробник : GOFORD SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 800V; 17A; 51W; TO220F Type of transistor: N-MOSFET Technology: SJ-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 17A Power dissipation: 51W Case: TO220F Gate-source voltage: ±30V Mounting: THT Kind of channel: enhancement Gate charge: 50nC Version: ESD |
товару немає в наявності |