GC2X50MPS06-227 GeneSiC Semiconductor
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SCHOT 650V 104A SOT227
Current - Reverse Leakage @ Vr: 10 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOT-227
Current - Average Rectified (Io) (per Diode): 104A (DC)
Diode Configuration: 2 Independent
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Відгуки про товар
Написати відгук
Технічний опис GC2X50MPS06-227 GeneSiC Semiconductor
Description: DIODE MOD SCHOT 650V 104A SOT227, Current - Reverse Leakage @ Vr: 10 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A, Voltage - DC Reverse (Vr) (Max): 650 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: SOT-227, Current - Average Rectified (Io) (per Diode): 104A (DC), Diode Configuration: 2 Independent, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Chassis Mount, Package / Case: SOT-227-4, miniBLOC, Packaging: Tube.
Інші пропозиції GC2X50MPS06-227
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
GC2X50MPS06-227 | GeneSiC Semiconductor |
Discrete Semiconductor Modules 650V 100A SOT-227 SiC Schottky MPS |
товару немає в наявності |
Мінімальне замовлення: 150 шт В кошику од. на суму грн. |
 |
GC2X50MPS06-227 | GeneSiC SEMICONDUCTOR |
Category: Diode modules Description: Module: diode; double independent; 650V; If: 50Ax2; SOT227B; screw Mechanical mounting: screw Max. forward impulse current: 0.32kA Max. forward voltage: 1.5V Type of semiconductor module: diode Technology: SiC Features of semiconductor devices: MPS Max. off-state voltage: 650V Electrical mounting: screw Load current: 50A x2 Max. load current: 100A Kind of package: tube Semiconductor structure: double independent Case: SOT227B Reverse recovery time: 10ns |
товару немає в наявності |
Мінімальне замовлення: 150 шт В кошику од. на суму грн. |
| GC2X50MPS06-227 |
|
Виробник: GeneSiC Semiconductor
Discrete Semiconductor Modules 650V 100A SOT-227 SiC Schottky MPS
Discrete Semiconductor Modules 650V 100A SOT-227 SiC Schottky MPS
товару немає в наявності
Мінімальне замовлення: 150 шт
В кошику
од. на суму грн.
| GC2X50MPS06-227 |
|
Виробник: GeneSiC SEMICONDUCTOR
Category: Diode modules
Description: Module: diode; double independent; 650V; If: 50Ax2; SOT227B; screw
Mechanical mounting: screw
Max. forward impulse current: 0.32kA
Max. forward voltage: 1.5V
Type of semiconductor module: diode
Technology: SiC
Features of semiconductor devices: MPS
Max. off-state voltage: 650V
Electrical mounting: screw
Load current: 50A x2
Max. load current: 100A
Kind of package: tube
Semiconductor structure: double independent
Case: SOT227B
Reverse recovery time: 10ns
Category: Diode modules
Description: Module: diode; double independent; 650V; If: 50Ax2; SOT227B; screw
Mechanical mounting: screw
Max. forward impulse current: 0.32kA
Max. forward voltage: 1.5V
Type of semiconductor module: diode
Technology: SiC
Features of semiconductor devices: MPS
Max. off-state voltage: 650V
Electrical mounting: screw
Load current: 50A x2
Max. load current: 100A
Kind of package: tube
Semiconductor structure: double independent
Case: SOT227B
Reverse recovery time: 10ns
товару немає в наявності
Мінімальне замовлення: 150 шт
В кошику
од. на суму грн.