GC2X50MPS06-227 GeneSiC Semiconductor
на замовлення 50 шт:
термін постачання 21-31 дні (днів)
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Технічний опис GC2X50MPS06-227 GeneSiC Semiconductor
Description: DIODE MOD SCHOT 650V 104A SOT227, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Diode Configuration: 2 Independent, Current - Average Rectified (Io) (per Diode): 104A (DC), Supplier Device Package: SOT-227, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A, Current - Reverse Leakage @ Vr: 10 µA @ 650 V.
Інші пропозиції GC2X50MPS06-227
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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GC2X50MPS06-227 | Виробник : GeneSiC Semiconductor |
 Silicon Carbide Schottky Diode |
товару немає в наявності |
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GC2X50MPS06-227 | Виробник : GeneSiC SEMICONDUCTOR |
Category: Diode modules Description: Module: diode; double independent; 650V; If: 50Ax2; SOT227B; screw Case: SOT227B Kind of package: tube Electrical mounting: screw Mechanical mounting: screw Type of module: diode Features of semiconductor devices: MPS Technology: SiC Max. off-state voltage: 650V Max. load current: 100A Max. forward voltage: 1.5V Load current: 50A x2 Semiconductor structure: double independent Reverse recovery time: 10ns Max. forward impulse current: 0.32kA кількість в упаковці: 1 шт |
товару немає в наявності |
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GC2X50MPS06-227 | Виробник : GeneSiC Semiconductor |
Description: DIODE MOD SCHOT 650V 104A SOT227 Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 104A (DC) Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A Current - Reverse Leakage @ Vr: 10 µA @ 650 V |
товару немає в наявності |
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GC2X50MPS06-227 | Виробник : GeneSiC Semiconductor |
Discrete Semiconductor Modules 650V 100A SOT-227 SiC Schottky MPS |
товару немає в наявності |
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GC2X50MPS06-227 | Виробник : GeneSiC SEMICONDUCTOR |
Category: Diode modules Description: Module: diode; double independent; 650V; If: 50Ax2; SOT227B; screw Case: SOT227B Kind of package: tube Electrical mounting: screw Mechanical mounting: screw Type of module: diode Features of semiconductor devices: MPS Technology: SiC Max. off-state voltage: 650V Max. load current: 100A Max. forward voltage: 1.5V Load current: 50A x2 Semiconductor structure: double independent Reverse recovery time: 10ns Max. forward impulse current: 0.32kA |
товару немає в наявності |