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GCMX010A120B2B1P

GCMX010A120B2B1P SemiQ

GCMX010A120B2B1P.pdf Виробник: SemiQ
Description: SIC 1200V 10M MOSFET HALF-BRIDGE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 750W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 214A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 13100pF @ 800V
Rds On (Max) @ Id, Vgs: 12mOhm @ 100A, 20V
Gate Charge (Qg) (Max) @ Vgs: 476nC @ 20V
Vgs(th) (Max) @ Id: 4V @ 40mA
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Технічний опис GCMX010A120B2B1P SemiQ

Description: SIC 1200V 10M MOSFET HALF-BRIDGE, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 750W (Tc), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 214A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 13100pF @ 800V, Rds On (Max) @ Id, Vgs: 12mOhm @ 100A, 20V, Gate Charge (Qg) (Max) @ Vgs: 476nC @ 20V, Vgs(th) (Max) @ Id: 4V @ 40mA.