GCMX020A120B2H1P SemiQ
Виробник: SemiQDescription: MOSFET 4N-CH 1200V 102A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 333W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 102A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 800V
Rds On (Max) @ Id, Vgs: 28mOhm @ 50A, 20V
Gate Charge (Qg) (Max) @ Vgs: 222nC @ 20V
Vgs(th) (Max) @ Id: 4V @ 20mA
на замовлення 8 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 7726.90 грн |
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Технічний опис GCMX020A120B2H1P SemiQ
Description: MOSFET 4N-CH 1200V 102A, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 4 N-Channel (Full Bridge), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 333W (Tc), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 102A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 800V, Rds On (Max) @ Id, Vgs: 28mOhm @ 50A, 20V, Gate Charge (Qg) (Max) @ Vgs: 222nC @ 20V, Vgs(th) (Max) @ Id: 4V @ 20mA.