| Кількість | Ціна |
|---|---|
| 1+ | 2822.94 грн |
| 10+ | 2326.28 грн |
| 40+ | 2022.85 грн |
| 100+ | 1757.13 грн |
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Технічний опис GCMX080A120B2H1P SemiQ
Description: MOSFET 4N-CH 1200V 27A, Vgs(th) (Max) @ Id: 4V @ 10mA, Gate Charge (Qg) (Max) @ Vgs: 56nC @ 20V, Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V, Input Capacitance (Ciss) (Max) @ Vds: 1362pF @ 800V, Current - Continuous Drain (Id) @ 25°C: 27A (Tc), Drain to Source Voltage (Vdss): 1200V (1.2kV), Power - Max: 119W (Tc), Technology: Silicon Carbide (SiC), Operating Temperature: -40°C ~ 175°C (TJ), Configuration: 4 N-Channel (Full Bridge), Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Tray.
Інші пропозиції GCMX080A120B2H1P за ціною від 2971.10 грн до 2971.10 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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|---|---|---|---|---|---|---|---|
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GCMX080A120B2H1P | SemiQ |
 Description: MOSFET 4N-CH 1200V 27AVgs(th) (Max) @ Id: 4V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 20V Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V Input Capacitance (Ciss) (Max) @ Vds: 1362pF @ 800V Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Power - Max: 119W (Tc) Technology: Silicon Carbide (SiC) Operating Temperature: -40°C ~ 175°C (TJ) Configuration: 4 N-Channel (Full Bridge) Mounting Type: Chassis Mount Package / Case: Module Packaging: Tray |
на замовлення 8 шт: термін постачання 21-31 дні (днів) |
|
| GCMX080A120B2H1P |
|
Виробник: SemiQ
Description: MOSFET 4N-CH 1200V 27A
Vgs(th) (Max) @ Id: 4V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 20V
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
Input Capacitance (Ciss) (Max) @ Vds: 1362pF @ 800V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Power - Max: 119W (Tc)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 4 N-Channel (Full Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Description: MOSFET 4N-CH 1200V 27A
Vgs(th) (Max) @ Id: 4V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 20V
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
Input Capacitance (Ciss) (Max) @ Vds: 1362pF @ 800V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Power - Max: 119W (Tc)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 4 N-Channel (Full Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
на замовлення 8 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 2971.10 грн |