GD05MPS17J-TR GeneSiC Semiconductor
Виробник: GeneSiC SemiconductorDescription: DIODE SIL CARB 1700V 15A TO2637
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 361pF @ 1V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263-7
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 20 µA @ 1700 V
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Технічний опис GD05MPS17J-TR GeneSiC Semiconductor
Description: DIODE SIL CARB 1700V 15A TO2637, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 361pF @ 1V, 1MHz, Current - Average Rectified (Io): 15A, Supplier Device Package: TO-263-7, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1700 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A, Current - Reverse Leakage @ Vr: 20 µA @ 1700 V.
Інші пропозиції GD05MPS17J-TR
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GD05MPS17J-TR | Виробник : GeneSiC Semiconductor |
Description: DIODE SIL CARB 1700V 15A TO2637 Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 361pF @ 1V, 1MHz Current - Average Rectified (Io): 15A Supplier Device Package: TO-263-7 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1700 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A Current - Reverse Leakage @ Vr: 20 µA @ 1700 V |
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