GD100MLX65L3S STARPOWER
Виробник: STARPOWER
Description: STARPOWER - GD100MLX65L3S - IGBT-Modul, Drei-Ebenen-Wechselrichter, 160 A, 1.45 V, 451 W, 150 °C, Modul
tariffCode: 85412900
Transistormontage: Modul
euEccn: NLR
rohsCompliant: YES
IGBT-Technologie: Trench/Feldstop
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
Kollektor-Emitter-Sättigungsspannung: 1.45V
IGBT-Anschluss: Lötanschluss
Verlustleistung: 451W
SVHC: To Be Advised
Bauform - Transistor: Modul
Dauerkollektorstrom: 160A
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 650V
IGBT-Konfiguration: Drei-Ebenen-Wechselrichter
productTraceability: No
usEccn: EAR99
Betriebstemperatur, max.: 150°C
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Технічний опис GD100MLX65L3S STARPOWER
Description: STARPOWER - GD100MLX65L3S - IGBT-Modul, Drei-Ebenen-Wechselrichter, 160 A, 1.45 V, 451 W, 150 °C, Modul, tariffCode: 85412900, Transistormontage: Modul, euEccn: NLR, rohsCompliant: YES, IGBT-Technologie: Trench/Feldstop, hazardous: false, rohsPhthalatesCompliant: YES, isCanonical: Y, Kollektor-Emitter-Sättigungsspannung: 1.45V, IGBT-Anschluss: Lötanschluss, Verlustleistung: 451W, SVHC: To Be Advised, Bauform - Transistor: Modul, Dauerkollektorstrom: 160A, Produktpalette: -, Kollektor-Emitter-Spannung, max.: 650V, IGBT-Konfiguration: Drei-Ebenen-Wechselrichter, productTraceability: No, usEccn: EAR99, Betriebstemperatur, max.: 150°C.
Інші пропозиції GD100MLX65L3S
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| GD100MLX65L3S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 100A; L3.1; screw Max. off-state voltage: 650V Semiconductor structure: diode/transistor Case: L3.1 Type of semiconductor module: IGBT Technology: Trench FS IGBT Mechanical mounting: screw Pulsed collector current: 200A Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Collector current: 100A Topology: NTC thermistor; three-level inverter; single-phase |
товару немає в наявності |
Мінімальне замовлення: 16 шт В кошику од. на суму грн. |
| GD100MLX65L3S |
Виробник: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 100A; L3.1; screw
Max. off-state voltage: 650V
Semiconductor structure: diode/transistor
Case: L3.1
Type of semiconductor module: IGBT
Technology: Trench FS IGBT
Mechanical mounting: screw
Pulsed collector current: 200A
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Collector current: 100A
Topology: NTC thermistor; three-level inverter; single-phase
Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 100A; L3.1; screw
Max. off-state voltage: 650V
Semiconductor structure: diode/transistor
Case: L3.1
Type of semiconductor module: IGBT
Technology: Trench FS IGBT
Mechanical mounting: screw
Pulsed collector current: 200A
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Collector current: 100A
Topology: NTC thermistor; three-level inverter; single-phase
товару немає в наявності
Мінімальне замовлення: 16 шт
В кошику
од. на суму грн.